WNM2046 single n - channel, 20 v, 0.55 a, power mosfet descriptions the WNM2046 is n - chann el enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc - dc conversion , p ower switch and charging circuit . standard product WNM2046 is pb - free. features ? trench technology ? supper high density cell design ? e xcellent on resistance for higher dc current ? extremely low threshold voltage ? small package dfn1006 - 3l applications dfn1006 - 3l pin configuration (top view) 6 = device code * = month (a~z) marking order i nformation device package shipping WNM2046 - 3/tr dfn1006 - 3l 10k /reel&tape v ds (v) typical rds(on) ( ) 20 0.220 @ v gs =4.5v 0.260 @ v gs =2.5v 0.315 @ v gs =1.8v g s d 3 1 2 ? small signal switching ? small moto driver 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum rating s thermal resistance ratings a surface mounted on fr4 board using 1 square inc h pad size, 1oz copper b surface mounted on fr4 bo ard using minimum pad size, 1oz copper c pulse width<380s, single pulse d maximum junction temperature t j =150 c. e pulse test: pulse width <380 us duty cycle <2%. parameter symbol 10 s steady state unit drain - source voltage v ds 20 v gate - source voltage v gs 5 continuous drain current a d t a =25c i d 0.8 4 0.78 a t a =70c 0. 67 0.6 2 maximum power dissipation a d t a =25c p d 0.3 2 0. 27 w t a =70c 0.2 0 0. 17 co ntinuous drain current b d t a =25c i d 0.7 9 0.7 4 a t a =70c 0.6 3 0. 59 maximum power dissipation b d t a =25c p d 0.2 8 0.2 4 w t a =70c 0.18 0.1 5 pulsed drain current c i dm 1.4 a operating junction temperature t j 150 c lead temperature t l 260 c sto rage temperature range t stg - 55 to 150 c parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 350 3 90 c/w steady state 395 45 5 junction - to - ambient thermal resistance b t 10 s r ja 3 97 43 5 steady state 445 5 0 5 junction - to - case thermal resistance steady state r jc 2 4 0 28 0 WNM2046 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics ( ta=25 o c , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = 250 u a 20 v zero gate voltage drain current i dss v ds =1 6 v, v gs = 0v 1 u a gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 5 v 5 u a on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 2 5 0u a 0.45 0.58 0.85 v drain - t o - s ource on - r esistance e r ds(on) vgs = 4.5v, id = 0.55a 2 20 800 m? vgs = 2.5v, id = 0.45a 2 60 1000 vgs = 1.8v, id = 0.35a 3 15 1500 forward transconductance g fs vds = 5 v, id = 0.55a 2.0 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 1 0 v 50. 6 pf output capacitance c oss 13.2 reverse transfer capacitance c rss 8.3 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 0.55 a 0.87 nc threshold gate charge q g(th) 0.06 gate - to - source charge q gs 0.15 gate - to - drain charge q gd 0.2 7 s witching characteristics turn - on delay time td(on) v gs = 4.5 v, v ds = 10 v, id=0.55a , r g =6 ? 34 ns rise time tr 97.6 turn - off delay time td(off) 606 fall time tf 3 18 body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.35 a 0.5 0.7 1.1 v WNM2046 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.4 0.8 1.2 1.6 2.0 v gs =1.8v v gs =2.5v v gs =4v v gs =3v v gs =1.5v i ds -drain to source current(a) v ds - drain to source voltage(v) 0.0 0.5 1.0 1.5 2.0 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 v gs =2.5v v gs =4.5v v gs =1.8v i ds - drain to source current(a) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.2 0.4 0.6 0.8 1.0 i d =0.55a r dson - on- resisstance(ohm) v gs - gate to source voltage(v) -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i d =250ua normalized gate to source voltage temperature( o c) -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 v gs =4.5v i d =0.55a normalized on-resistance temperature( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ds =0.5v i ds - drain to source current (a) v gs - gate to source voltage (v) t=-55 c t=125 c t=25 c typical characteristics (ta=25 o c, unless otherwise noted) ou tput c haracteristics on - r esistance vs. d rain c urrent on - resistance vs. junction temperature transfer c haracteristics on - resistance vs. gate - to - source voltage threshold voltage vs. temper ature r ds(on) - on-resistance( ? ) WNM2046 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.2 0.4 0.6 0.8 1.0 150 o c 25 o c i s - source to drain current(a) v sd - source to drain voltage(v) 0 150 300 450 600 750 900 0 1 2 3 4 5 v gs =4.5v v ds =10v i d =0.55a v gs - gate to source voltage(v) qg(pc) 0.1 1 10 100 0.01 0.1 1 10 1ms 10ms 100ms 1s 10s dc t a =25 c single pulse i dm limit bvdss limit id - drain to source current (a) v ds - drain to source voltage (v) *v gs >minimum v gs at which r ds(on) is specified limit by rdson 1e-3 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 power (w) pulse width (s) t j(max) =150 c t a =25 c 0 2 4 6 8 10 0 10 20 30 40 50 60 v gs =0v f=1mhz ciss coss crss c - capacitance(pf) v ds drain-to-source voltage (v) capacitance single pulse power body diode forward voltage safe operating power WNM2046 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 0.2 duty cycle=0.5 0.1 0.05 0.02 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse transient therma l r esponse (junction - to - ambient) p dm t 1 t 2 1. duty cycle, d=t 1 /t 2 2. per unit base = r ja = 395 c/w 3. t jm - t a = p dm r ja 4. surface mounted WNM2046 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn1006 - 3l recommend land pattern (unit: mm) note: this land pattern is for your reference only. actual pad layouts may vary depending on application. 0.25 WNM2046 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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